Analog BiCMOS Design.pdf
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Analog
BiCMOS
DESIGN
Practices and Pitfalls
Analog
BiCMOS
DESIGN
Practices and Pitfalls
James C. Daly
Department of Electrical and Computer Engineering
University of Rhode Island
Denis P. Galipeau
Cherry Semiconductor Corp.
CRC Press
Boca Raton London New York Washington, D.C.
Foreword
This book presents practical methods and pitfalls encountered
in the design of biCMOS integrated circuits. It is intended as a
reference for design engineers and as a text for an introductory
course on analog integrated circuit design for engineering seniors
and graduate students. A broad range of topics are covered with
the intent of giving new designers the tools to complete a design
project. Most of the topics have been simplified so they can be
understood by students who have had a course in electronics.
The material has been used in a course open to seniors and
graduate students at the University of Rhode Island. In the
course, students were required to design an analog integrated cir-
cuit that was fabricated by Cherry Semiconductor Corporation.
In the process of assembling material for the book, we had dis-
cussions with many people who have been generous with informa-
tion, ideas and criticism. We are grateful to James Alvernez, Mark
Belch, Brad Benson, Mark Crowther, Vincenzo DiTommaso, Jeff
Dumas, Paul Ferrara, Godi Fischer, Justin Fisher, Robert Fugere,
Brian Harnedy, David Harrington, Ashish Kirtania, Seok-Bum
Ko, Shawn LaLiberte, Andreas Ladas, Sangmok Lee, Eric Lind-
berg, Jien-Chung Lo, Robert Maigret, Nadia Matchey, Andrew
McKinnon, Jay Moser, Ted Neira, Peter Rathfelder, Shelby Ray-
mond, Jon Rhan, Paul Sisson, Michael Tedeschi, Claudio Tuoz-
zolo, and Yingping Zheng.
Finally, we owe our thanks to the management and engineering
staff of Cherry Semiconductor Corporation. CSC has fabricated
scores of analog IC designs generated by the URI students enrolled
in the course that has been the basis for this book.
James C. Daly
Denis P. Galipeau
© 2000 by CRC Press LLC
Contents
1
Devices
1.1
Introduction
1.2
Silicon Conductivity
1.2.1
Drift Current
1.2.2
Energy Bands
1.2.3
Sheet Resistance
1.2.4
Diffusion Current
1.3
Pn Junctions
1.3.1
Breakdown Voltage
1.3.2
Junction Capacitance
1.3.3
The Law of the Junction
1.3.4
Diffusion Capacitance
1.4
Diode Current
1.5
Bipolar Transistors
1.5.1
Collector Current
1.5.2
Base Current
1.5.3
Ebers-Moll Model
1.5.4
Breakdown
1.6
MOS Transistors
1.6.1
Simple MOS Model
1.7
DMOS Transistors
1.8
Zener Diodes
1.9
EpiFETs
1.10
Chapter Exercises
2
Device Models
2.1
Introduction
2.2
Bipolar Transistors
2.2.1
Early Effect
2.2.2
High Level Injection
2.2.3
Gummel-Poon Model
2.3
MOS Transistors
2.3.1
Bipolar SPICE Implementation
© 2000 by CRC Press LLC
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